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IPB77N06S3-09 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPB77N06S3-09
Description  OptiMOS-T2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPB77N06S3-09 Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I D
T C=25 °C, V GS=10 V
77
A
T C=100 °C,
V GS=10 V
2)
55
Pulsed drain current
1)
I D,pulse
T C=25 °C
160
Avalanche energy, single pulse
1)
E AS
I D=38.5 A
245
mJ
Avalanche current, single pulse
I AS
77
A
Gate source voltage
2)
V GS
±20
V
Power dissipation
P tot
T C=25 °C
107
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V DS
55
V
R DS(on),max (SMD version)
8.8
m
Ω
I D
77
A
Product Summary
Type
Package
Marking
IPB77N06S3-09
PG-TO263-3-2
3N0609
IPI77N06S3-09
PG-TO262-3-1
3N0609
IPP77N06S3-09
PG-TO220-3-1
3N0609
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Rev. 1.1
page 1
2007-11-07


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