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IPI80N04S3-03 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPI80N04S3-03
Description  OptiMOS-T Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPI80N04S3-03 Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I D
T C=25 °C, V GS=10 V
80
A
T C=100 °C,
V GS=10 V
2)
80
Pulsed drain current
2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse
E AS
I D=80 A
526
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
T C=25 °C
188
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V DS
40
V
R DS(on),max (SMD version)
3.2
m
Ω
I D
80
A
Product Summary
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Type
Package
Marking
IPB80N04S3-03
PG-TO263-3-2
3N0403
IPI80N04S3-03
PG-TO262-3-1
3N0403
IPP80N04S3-03
PG-TO220-3-1
3N0403
Rev. 1.0
page 1
2007-05-03


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