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IPB80N04S3-06 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB80N04S3-06 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 2500 3250 pF Output capacitance C oss - 660 860 Reverse transfer capacitance Crss - 100 130 Turn-on delay time t d(on) -15 - ns Rise time t r -10 - Turn-off delay time t d(off) -20 - Fall time t f -10 - Gate Charge Characteristics 2) Gate to source charge Q gs -15 20 nC Gate to drain charge Q gd -9 16 Gate charge total Q g -36 47 Gate plateau voltage V plateau - 6.0 - V Reverse Diode Diode continous forward current 2) I S - - 80 A Diode pulse current 2) I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 1 1.3 V Reverse recovery time 2) t rr V R=20 V, I F=I S, di F/dt =100 A/µs -34 - ns Reverse recovery charge 2) Q rr -36 - nC T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=6 Ω V DD=32 V, I D=80 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 1.5K/W the chip is able to carry 100A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos Rev. 1.1 page 3 2007-05-03 |
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