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IPI80N06S3-07 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPI80N06S3-07 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 T j [°C] 11 V 44 V 0 2 4 6 8 10 12 0 50 100 150 200 Q gate [nC] 80 A 40 A 20 A 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 T j [°C] V G Q Qg Qg Qg Rev. 1.1 page 7 2007-11-07 |
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