Electronic Components Datasheet Search |
|
IPP80N06S2-H5 Datasheet(PDF) 1 Page - Infineon Technologies AG |
|
IPP80N06S2-H5 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25 °C, V GS=10 V 80 A T C=100 °C, V GS=10 V 2) 80 Pulsed drain current 2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse 2) E AS I D= 80 A 700 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 55 V R DS(on),max (SMD version) 5.2 m Ω I D 80 A Product Summary Type Package Ordering Code Marking IPB80N06S2-H5 PG-TO263-3-2 SP0002-18162 2N06H5 IPP80N06S2-H5 PG-TO220-3-1 SP0002-18155 2N06H5 PG-TO220-3-1 PG-TO263-3-2 Rev. 1.0 page 1 2006-03-13 |
Similar Part No. - IPP80N06S2-H5 |
|
Similar Description - IPP80N06S2-H5 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |