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11DQ05 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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11DQ05 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  11DQ03 - 11DQ10 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 30 - 100 Volts IO : 1.1 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low cost * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 11DQ 03 11DQ 04 11DQ 05 11DQ 06 11DQ 09 11DQ 10 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 30 40 50 60 90 100 V Maximum RMS Voltage VRMS 21 28 35 42 63 70 V Maximum DC Blocking Voltage VDC 30 40 50 60 90 100 V Maximum Average Forward Current IF(AV) 1.1 A at Ambient Temperature Ta 58 40 25 °C Maximum Peak Forward Surge Current single half sine wave superimposed on rated load Maximum Forward Voltage at IF = 1.1 A VF 0.52 0.56 0.74 V Maximum Reverse Current at Rated DC Blocking Voltage TJ = 125 °C Junction Temperature Range TJ - 40 to + 125 °C Storage Temperature Range TSTG - 65 to + 150 °C Page 1 of 2 Rev. 02 : March 25, 2005 42 A IR 6 11 6 mA RATING IFSM 42 26 DO - 41 0.205 (5.20) 0.160 (4.10) 0.107 (2.74) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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