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KBU8M Datasheet(PDF) 2 Page - EIC discrete Semiconductors

Part # KBU8M
Description  Silicon Bridge Rectifier
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

KBU8M Datasheet(HTML) 2 Page - EIC discrete Semiconductors

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RATING AND CHARACTERISTIC CURVES ( KBU8A - KBU8M )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : September 3, 2005
6.0
4.0
2.0
8.0
100
100
10
200
0
300
0
100
0.1
10
80
0.1
1.0
1.0
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25
°C
Pulse Width = 300
µs
2 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
Ta = 100
°C
150
250
50
Single phase
Half Wave 60Hz
Resistive or Inductive Load
.375" 9.0 mm Lead Lengths
400
350
Ta = 25
°C


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