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2N3904-T18 Datasheet(PDF) 2 Page - Seme LAB

Part # 2N3904-T18
Description  GENERAL PURPOSE
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

2N3904-T18 Datasheet(HTML) 2 Page - Seme LAB

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2N3904-T18
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8022, ISSUE 1
ELECTRICAL CHARACTERISTICS (T
case=25°C unless otherwise stated)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)CEO*
Collector Emitter Breakdown
Voltage
I
C = 1.0mA
I
B = 0
40
-
-
V
(BR)CBO
Collector Base Breakdown Voltage
I
C = 10µA
I
E = 0
60
-
-
V
(BR)EBO
Emitter Base Breakdown Voltage
I
E = 10µA
I
C = 0
6
-
-
V
I
CEX
Collector Emitter Cut-Off Current
V
CE = 30V
V
EB = 3V
-
-
50
nA
I
C = 0.1mA
V
CE = 1.0V
40
-
-
I
C = 1.0mA
V
CE = 1.0V
70
-
-
I
C = 10mA
V
CE = 1.0V
100
-
300
I
C = 50mA
V
CE = 1.0V
60
-
-
h
FE*
DC Current Gain (V
CE = 10V)
I
C = 100mA
V
CE = 1.0V
30
-
-
h
fe
Small Signal Current Gain f=1.0KHz
I
C = 1.0mA
V
CE = 10V
100
-
400
I
C = 10mA
I
B = 1.0mA
-
-
0.2
V
CE(sat)*
Collector-Emitter Saturation Voltage
I
C = 50mA
I
B = 5.0mA
-
-
0.3
I
C = 10mA
I
B = 1.0mA
0.65
-
0.85
V
BE(sat)*
Base-Emitter Saturation Voltage
I
C = 50mA
I
B = 5.0mA
-
-
0.95
V
DYNAMIC CHARACTERISTICS (T
case=25°C unless otherwise stated)
I
C = 10mA
V
CE = 20V
f
T
Current Gain – Bandwidth Product
f = 100MHz
300
-
-
MHz
I
E = 0
V
CB = 5V
C
obo
Output Capacitance
f = 1.0MHz
-
-
4
I
C = 0
V
EB = 0.5V
C
IBO
Input Capacitance
f = 1.0MHz
-
-
8
pF
I
C = 100µA
V
CE = 5V
N
F
Noise Figure
!
f = 1.0KHz
R
S = 1KΩ
-
-
5
dB
t
d
Delay Time
V
CC = 3V
V
BE = 0.5V
-
-
35
t
r
Rise Time
I
C = 10mA
I
B1 = 1.0mA
-
-
35
t
s
Storage Time
V
CC = 3V
V
BE = 0.5V
-
-
200
t
f
Fall Time
I
C = 10mA
I
B1=IB2= 1.0mA
-
-
50
ns
* Pulse test t
p = 300µs, δ < 2%
! Parameter characteristic verified by design only


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