2N6438 datasheet(2/2 Pages) SEME-LAB

Part #	2N6438

Description	HIGH POWER PNP SILICON TRANSISTORS

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Manufacturer	SEME-LAB [Seme LAB]

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2N6436

2N6437

2N6438

Document Number 3252

Issue 3

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Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

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Rthj-case

1.25

Thermal Resistance Junction-case

Max

°C/W

THERMAL DATA

Parameter

Test Conditions

Min.

Typ.

Max. Unit

µA

mA

µA

mA

µA

mA

µA

V

—

V

MHz

pF

μs

10

100

10

1.0

10

1.0

10

1.0

50

80

100

120

30

20

120

12

1.0

1.8

2.5

40

700

0.3

1.0

0.25

ICBO

IEBO

ICEX

ICEO

V(BR)CEO*

hFE*

VCE(sat)*

VBE(sat)*

fT

Cob

tr

ts

tf

Collector Cut Off Current

Emitter Cut Off Current

Collector Cut Off Current

Collector Cut off Current

Collector Emitter Breakdown Voltage

DC Current Gain

Collector - Emitter Saturation Voltage

Base Emitter Saturation Voltage

Current Gain - Bandwidth Product

Output Capacitance

Rise Time

Storage

Fall Time

VCB = 100V IE = 0

2N6436

VCB = 120V IE = 0

2N6437

VCB = 140V IE = 0

2N6438

VEB = 6V

IC = 0

VCE = 90V

2N6436

VBE (off) =-1.5V TC = 150°C

VCE = 110V

2N6437

VBE (off) =-1.5V TC = 150°C

VCE = 130V

2N6436

VBE (off) =-1.5V TC = 150°C

VCE = 40V IB = 0

2N6436

VCE = 50V IB = 0

2N6437

VCE = 60V IB = 0.

2N6438

2N6436

IC = 50mA

IB = 0 2N6437

2N6438

VCE =2.0V

IC = 0.5A

VCE = 2.0V

IC = 10A

VCE = 2.0V

IC = 25A

IC = 10A

IB = 1.0A

IC = 25A

IB = 2.5A

IC = 10A

IB = 1.0AV

IC = 25A

IB = 2.5A

IC = 1.0A

VCE = 10V

ftest = 10MHz

IE = 0A

VCE = 10V

f = 100kHz

VCC = 80V

IC = 10A

VBE(off) = 6.0V IB1 = 1.0A

VCC = 80V

IC = 10A

VBE(off) = 6.0V IB1 = IB2 =1.0A

ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated)

* Pulse test: Pulse Width

≤ 300μs , Duty Cycle ≤ 2.0%

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