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2N6661DCSM Datasheet(PDF) 2 Page - Seme LAB |
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2N6661DCSM Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page 2N6661DCSM Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 8874, ISSUE 1 STATIC ELECTRICAL RATINGS (Each Side - T case=25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = 1.0µA 90 - - VDS = VGS ID = 1.0mA 0.8 - 2 TC = 125°C 0.3 - - VGS(th) Gate – Source threshold Voltage TC = -55°C - - 2.5 V VGS = ±20V VDS = 0V - - ±100 IGSS Gate – Source Leakage Current TC = 125°C - - ±500 nA VDS = 72V VGS = 0V - - 1.0 IDSS Zero Gate Voltage Drain Current TC = 125°C - - 100 µA ID(on) On – State Drain Current (note 3) VDS = 15V VGS = 10V 1.5 - - A VGS = 5V ID = 0.3A - - 5.3 VGS = 10V ID = 1.0A - - 4 RDS(on) Drain – Source On Resistance (note 3) TC = 125°C - - 7.5 VGS = 5V ID = 0.3A - - 1.6 VGS = 10V ID = 1.0A - - 4 VDS(on) Drain – Source On Voltage (note 3) TC = 125°C - - 7.5 V gFS Forward Transconductance (Note 3) VDS = 7.5V ID = 0.475A 170 - - ms VSD Diode Forward Voltage (Note 3) VGS = 0V Is = 0.86A 0.7 - 1.4 V DYNAMIC CHARACTERISTICS Ciss Input Capacitance - 50 - Coss Output Capacitance - 40 - Crss Reverse Transfer Capacitance VDS = 25V f = 1.0MHz VGS = 0V - 10 - pF Td(on) Turn-On Delay - 10 - Td(off) Turn-Off Delay Time VDD = 25V RGS = 50 ID = 1A (Note 3) - 10 - ns MATCHING CHARACTERISTICS FET1 to FET2 VGS(th) M Gate – Source threshold Voltage Matching VDS = VGS ID = 1mA - - ±25 mV gFSM Forward Transconductance Matching (Note 3) VDS = 7.5V ID = 0.475A - - 50 ms |
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