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BTA08 Datasheet(PDF) 3 Page - STMicroelectronics |
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BTA08 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page BTA08, BTB08 and T8 Series Characteristics Doc ID 7472 Rev 7 3/12 S = Copper surface under tab. Table 3. Standard (4 quadrants) Symbol Test conditions Quadrant BTA08 / BTB08 Unit CB IGT (1) VD = 12 V, RL = 33 Ω I - II - III IV MAX. 25 50 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 25 50 mA IL IG = 1.2 IGT I - III - IV MAX. 40 50 mA II 80 100 dV/dt (2) VD = 67 %VDRM gate open Tj = 125 °C MIN. 200 400 V/µs (dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125 °C MIN. 5 10 V/µs Table 4. Static characteristics Symbol Test conditions Value Unit VTM (1) ITM = 11 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V Vt0 (2) Threshold voltage Tj = 125 °C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125 °C MAX. 50 m Ω IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. 5µA Tj = 125 °C 1 mA 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) IPAK / D2PAK / DPAK / TO-220AB 1.6 °C/W TO-220AB Insulated 2.5 Rth(j-a) Junction to ambient S = 1 cm² D2PAK 45 °C/W S = 0.5 cm² DPAK 70 TO-220AB / TO-220AB Insulated 60 IPAK 100 |
Similar Part No. - BTA08_10 |
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Similar Description - BTA08_10 |
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