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IRFG6110 Datasheet(PDF) 2 Page - Seme LAB

Part # IRFG6110
Description  14 LEAD DUAL IN LINE QUAD
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

IRFG6110 Datasheet(HTML) 2 Page - Seme LAB

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2N7336
IRFG6110
4/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
100
0.13
0.70
0.80
24
0.86
25
250
100
–100
180
82
15
15
7.5
7.5
20
25
40
40
1
4
1.5
200
0.83
Negligible
4.0
6.0
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 0.6A
VGS = 10V
ID = 1A
VDS = VGS
ID = 250µA
VDS ≥ 15V
IDS = 0.60A
VGS = 0
VDS = 0.8VDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 1A
VDS = 0.5VDS
VDD = 50V
ID = 1A
RG = 24Ω
IS = 1.0A
TJ = 25°C
VGS = 0
IF = 1A
TJ = 25°C
di / dt ≤ 100A/µsVDD ≤ 50V
ELECTRICAL CHARACTERISTICS FOR N-CHANNEL (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
V
V/°C
V
S(
µA
nA
pF
nC
ns
A
V
ns
µC
nH
BVDSS
∆BVDSS
∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300µs, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS


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