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SD060SA60A Datasheet(PDF) 1 Page - Sensitron |
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SD060SA60A Datasheet(HTML) 1 Page - Sensitron |
1 / 3 page SENSITRON SEMICONDUCTOR ©2004 Sensitron Semiconductor • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com • SD060SA60A/B Technical Data Data Sheet 4947, Rev. A SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C T J Operation) Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • Soft Reverse Recovery at Low and High Temperature • Very Low Forward Voltage Drop • Low Power Loss, High Efficiency • High Surge Capacity • Guard Ring for Enhanced Durability and Long Term Reliability • Guaranteed Reverse Avalanche Characteristics • Electrically / Mechanically Stable during and after Packaging Maximum Ratings (1): Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 60 V Max. Average Forward Current IF(AV) 50% duty cycle, rectangular wave form 3 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (1) 55 A Non-Repetitive Avalanche Energy EAS TJ = 25 °C, IAS = 1.3 A, L = 10 mH 8.6 mJ Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 μs ƒ limited by T J max VA=1.5VR 1.3 A Max. Junction Temperature TJ - -65 to +150 °C Max. Storage Temperature Tstg - -65 to +150 °C Electrical Characteristics (1): Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop VF1 @ 3A, Pulse, TJ = 25 °C 0.60 V VF2 @ 3A, Pulse, TJ = 125 °C 0.55 V Max. Reverse Current IR1 @VR = 60V, Pulse, TJ = 25 °C 400 μA IR2 @VR = 60V, Pulse, TJ = 125 °C 28 mA Max. Junction Capacitance CT @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) 160 pF (1) in SHD package |
Similar Part No. - SD060SA60A_10 |
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Similar Description - SD060SA60A_10 |
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