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STD6NF10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD6NF10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 14 page STD6NF10, STU6NF10 Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 4 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 24 A Ptot Total dissipation at TC = 25 °C 30 W Derating factor 0.2 W/°C dv/dt (2) 2. ISD ≤ 6 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak diode recovery voltage slope 40 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V Single pulse avalanche energy 200 mJ Tstg Storage temperature -65 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 5 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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