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STPS30170C Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS30170C Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page STPS30170C 2/9 Table 3: Absolute Ratings (limiting values, per diode) Table 4: Thermal Parameters Table 5: Static Electrical Characteristics (per diode) Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF 2 (RMS) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current δ = 0.5 TO-220FPAB Tc = 120 °C Per diode Per device 15 A TO-220AB / D2PAK Tc = 155 °C TO-247 30 IFSM Surge non repetitive forward current tp = 10ms sinusoidal 220 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25 °C 10500 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature * 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs * : thermal runaway condition for a diode on its own heatsink Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220FPAB Per diode Total 4 3.3 °C/W TO-220AB / D2PAK Per diode Total 1.6 0.85 TO-247 Per diode Total 1.5 0.8 Rth(c) TO-220FPAB Coupling 2.6 °C/W TO-220AB / D2PAK Coupling 0.3 TO-247 Coupling 0.3 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Parameter Tests conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25 °C VR = VRRM 20 µA Tj = 125 °C 520 mA VF ** Forward voltage drop Tj = 25 °C IF = 15 A 0.92 V Tj = 125 °C 0.69 0.75 Tj = 25 °C IF = 30 A 1 Tj = 125 °C 0.80 0.86 dPtot dTj --------------- 1 Rth j a – () -------------------------- > |
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