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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA,

DATA SHEET 5053 REV. A

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC

HERMETIC LCC-3P PACKAGE

FEATURES:

MAXIMUM RATINGS

RATING

SYMBOL

MAX.

UNITS

PEAK INVERSE VOLTAGE

PIV

1200

Volts

10

Amps

Single Package)

5

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG

30

Amps

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG

(t = 10

μs, pulse) T

100

Amps

15

W

MAXIMUM THERMAL RESISTANCE, Junction to Case (per dual package)

1.30

°C/W

MAXIMUM OPERATING TEMPERATURE RANGE*

Top &Tstg

-55 to

+200

°C

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device

above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.6

2.6

1.8

3.0

Volts

MAXIMUM REVERSE CURRENT (1200V PIV per leg)

0.05

0.10

0.20

1.00

mA

per leg

28

N/A

nC

450

PF

Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche

capabilities of the device are limited.Customer designs will need to accommodate these limitations and avoid exposure of the device

to this and other potentially damaging conditions in their applications.

SHD619052

SHD619052P