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STTH1302CT Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH1302CT Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 7 page STTH1302CT/CG/CFP 4/7 0 10 20 30 40 50 60 70 1.E-03 1.E-02 1.E-01 1.E+00 t(s) T =25°C C T =75°C C T =125°C C I (A) M IM t δ=0.5 Fig. 5-2: Non repetitive surge peak forward current versus overload duration per diode (TO-220FPAB). 0 10 20 30 40 50 60 70 80 10 100 1000 trr(ns) Tj=25°C T =125°C j I =6.5A V =100V F R dI /dt(A/µs) F Fig. 9: Reverse recovery time versus dIF/dt (90% confidence, per diode). 10 100 1 10 100 1000 V (V) R F=1MHz V =30V Tj=25°C OSC RMS C(nF) Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 T (°C) amb Rth =Rth (j-a) (j-c) D²PAK (S=1cm²) Rth =50°C/W (j-a) TO-220AB/D²PAK TO-220FPAB I (A) F(AV) Fig. 6: Average forward current versus ambient tem- perature ( δ=0.5, per diode). 0 20 40 60 80 100 120 140 160 180 200 220 240 10 100 1000 dI /dt(A/µs) F Q (nC) RR I =6.5A V =200V F R T =125°C j Tj=25°C Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence, per diode). 0 2 4 6 8 10 12 10 100 1000 I (A) RM Tj=25°C T =125°C j I =6.5A V =100V F R dI /dt(A/µs) F Fig. 10: Reverse recovery current versus dIF/dt (90% confidence, per diode). |
Similar Part No. - STTH1302CT_03 |
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Similar Description - STTH1302CT_03 |
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