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STX616-AP Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STX616-AP
Description  High voltage NPN power transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX616 STX616-AP
Electrical characteristics
3/8
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 980V
VCE = 980V
Tc = 125°C
50
0.5
µA
mA
VCE(sus)
(1)
Collector-emitter
sustaining voltage
(IB = 0)
IC = 10mA
500
V
VEBO
Emitter-base voltage
(IC = 0)
IE = 1mA
12
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.2A
IB = 40mA
IC = 1A
IB = 200mA
0.5
1
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 0.2A
IB = 40mA
IC = 1A
IB = 200mA
1
1.4
V
V
hFE
(1)
DC current gain
IC = 500µA
VCE = 2V
IC = 200mA
VCE = 5V
IC = 500mA
VCE = 5V
IC = 1.5A
VCE = 5V
17
25
12
4
ton
ts
tf
RESISTIVE LOAD
Turn-on time
Storage time
Fall time
VCC = 250V
IC = 250mA
IB1 = 65mA
IB2 = -130mA
0.2
5
0.65
µs
µs
µs
ton
ts
tf
RESISTIVE LOAD
Turn-on time
Storage time
Fall time
VCC = 250V IC = 0.8A
IB1 = 160mA IB2 = -0.4A
1
2.5
0.35
µs
µs
µs
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
Vcl = 300V
IC = 250mA
IB1 = 65mA
IB2 = -130mA
L = 200
µH
5
0.5
µs
µs
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
Vcl = 300V
IC = 0.8A
IB1 = 160mA IB2 = -0.4A
L = 200
µH
2.5
0.25
µs
µs




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