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THDT6511D Datasheet(PDF) 3 Page - STMicroelectronics |
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THDT6511D Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page Obsolete Product(s) - Obsolete Product(s) THDT6511D 3/6 Symbol Tests conditions Min. Typ. Max. Unit VBR IR = 1mA 65 V VBO 68 85 V IRM VRM =63V 100 µA IBO tp = 100 µs 110 450 mA IBO F=50Hz RG = 600 Ω 500 mA IH 150 mA αT15 10 -4/°C C VD = 100 mVRMS F = 1KHz 500 pF dV/dt Linear ramp up to 67 % of VBR 5kV / µs 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol Test conditions Min. Typ. Max. Unit VF IF =1A tp=100 µs 2V VFP see curve fig. 1 NA NA NA V NA : Non Available 1 - PARAMETERS RELATED TO DIODE LINE / GND |
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