iC-GF

TRANSCEIVER

Rev C1, Page 8/26

ELECTRICAL CHARACTERISTICS

Operating Conditions: VBO = 9...30 V (referenced to VN), Tj = -40...125 °C, RSET = 6.8 kΩ ±1%, unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

High-Side Switch QP1, QP2

201

Vs()hi

Saturation Voltage hi vs. VBO

RSET = 5.1 kΩ;

I() = -100 mA

-1.4

V

I() = -50 mA

-0.85

V

I() = -10 mA

-0.35

V

202

Isc()hi

Short-Circuit Current hi

RSET = 6.8 kΩ, V() = 0...VBO − 3 V

-230

-150

-100

mA

RSET = 5.1 kΩ, V() = 0...VBO − 4 V

-325

-220

-140

mA

203

Vol()on

Overload Detection Threshold on QP1, QP2 hi → lo; referenced to VBO

-2.1

-1.5

V

204

Vol()off

Overload Detection Threshold off QP1, QP2 lo → hi; referenced to VBO

-1.9

-1.4

V

205

Vol()hys

Overload Detection Threshold

Hysteresis

Vol()hys = Vol()off − Vol()on

0.1

V

206

llk()

Leakage Current at QP1, QP2

OEN = lo;

V(QP1, QP2) = -6...0 V

-100

0

µA

V(QP1, QP2) = 0 V...VBO

-40

0

µA

V(QP1, QP2) > VBO...VN + 30 V

0

100

µA

207

SR()

Slew Rate (switch off → on)

VBO = 30 V, Cl = 2.2 nF

40

V/µs

208

Imax()

Maximum Current in QP1, QP2

V(ISET) = 0 V, VBO − QPx > 4 V

-520

-170

mA

209

Ir()

Reverse Current in QP1, QP2

QPx activated; V(QPx) = VBO...VBO + 6 V

1

mA

210

Iexc()

Excitation Current

NEXC = 0 (see Fig. 9)

-540

-300

mA

211

texc

Excitation Time

NEXC = 0 (see Fig. 9)

1.5

3.5

µs

212

tdead

Dead Time

Push-pull configuration, QPx activation delay

after QNx deactivation (see Fig. 9)

1.2

2.8

µs

Short-Circuit/Overload Monitor

301

toldly

Time to Overload Message

(NOVL 1 → 0, outputs tri-state)

Permanent overload (see Fig. 6)

126

160

213

µs

302

tolcl

Time to Overload Message Reset

(NOVL 0 → 1, outputs active)

No overload (see Fig. 6)

35

50

80

ms

303

tdscr

Time to Communication Request

acknowledge

SPI mode, ENSCR = 1,

QCFGx(1:0) = 01/10/11

70

90

µs

304

Maximum Time for no Communi-

cation Request acknowledge

40

µs

305

Minimum Time for no Communi-

cation Request acknowledge

151

µs

VBO Voltage Monitor

401

VBOon

Turn-On Threshold VBO

Referenced to GND

8

9

V

402

VBOoff

Turn-Off Threshold VBO

Decreasing voltage VBO

7.3

8.5

V

403

VBOhys

Hysteresis

VBOhys = VBOon − VBOoff

200

500

mV

404

tuvdly

Time to Undervoltage Message

(NUVD 1 → 0, switch tri-state)

Permanent undervoltage at VBR, VCC or

VCC3

25

120

µs

405

tuvcl

Time to Undervoltage Message

Reset

(NUVD 0 → 1, switch active)

No undervoltage at VBR, VCC and VCC3

(see Fig. 6)

35

50

80

ms

Temperature Monitor

501

Toff

Overtemperature Shutdown

(NOVL 1 → 0, switch tri-state)

Increasing temperature Tj

130

165

°C

502

ton

Overtemperature Shutdown Re-

set Delay

(NOVL 0 → 1, switch active)

Temperature Tj < Toff

35

50

80

ms

Inputs IN1/TX, IN2/MOSI, INV1/ENSPI, QCFG1/NCS, QCFG2/SCLK, OEN

601

Vt()hi

Input Threshold Voltage hi at

IN1/TX, IN2/MOSI, OEN, SCLK,

NCS

2

V

602

Vt()lo

Input Threshold Voltage lo at

IN1/TX, IN2/MOSI, OEN, SCLK,

NCS

0.8

V