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IC212 Datasheet(PDF) 2 Page - IC-Haus GmbH |
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IC212 Datasheet(HTML) 2 Page - IC-Haus GmbH |
2 / 15 page prel imin ary prel imin ary iC212 HIGHSPEED PHOTORECEIVER Rev A2, Page 2/15 DESCRIPTION The iC-Haus Highspeed Photoreceiver iC212 has been developed for optical high speed measurement. With its bandwidth ranging from DC up to 1.4 GHz it detects photo signals from constant light to high speed with rise times down to 280 ps. The iC212 Highspeed Photoreceiver also features offset adjust- ment to compensate DC levels of the input signal. The photodiode used offers a spectral range from 320 to 1000 nm with an active area diameter of about Ø 0.4 mm, which is increased by an Ø 1.5 mm ball lens, resulting in an effective usable area of typical 0.75 mm². The Highspeed Photoreceiver is able to detect optical power levels in the sub mW range at GHz speed. The iC212 Highspeed Photoreceiver comes with M6 mounting holes for integration in optical bench sys- tems and an optional fiber-optic input adapter for op- tical fiber coupling. ABSOLUTE MAXIMUM RATINGS Beyond these values damage may occur; device operation is not guaranteed. Item Symbol Parameter Conditions Unit No. Min. Max. G001 Pmax Optical Input Power 10 mW G002 Vs Power Supply Voltage ±20 V ELECTRICAL CHARACTERISTICS Test Conditions: Vs = ±15 V, Ta = 25 °C, System Impedace 50 Ω Item Symbol Parameter Conditions Unit No. Min. Typ. Max. Gain 101 A Amplifier Transimpedance Conversion Gain 50 Ω load 3.125 V/mA λ = 760 nm 1.625 V/mW Frequency Response 201 fmax Upper Cut-Off Frequency -3 dB 1.4 Ghz 202 ∆ A Gain Flatness ±1 dB 203 tr Rise Time 10 to 90% 280 ps 204 tpd Propagation Delay optical in => electrical out, 50% to 50% 750 ps Detector (Si PIN photodiode) 301 d Active Area Diameter ball lens Ø 1.5 mm 0.4 mm 302 Aeff Effective Active Area ball lens Ø 1.5 mm, note tolerances from Fig. 3 0.75 mm² 303 λ Spectral Range 320 1000 nm 304 Pmax Max. Optical Input Power average 10 mW linear amplification @ 760 nm 615 µW 305 NEP Noise equivalent power including amplifier noise, at λ=760nm and f = 1 GHz; (for frequency dependence see Fig. ??) 115 pW/ √ Hz Output 401 Rout Output Impedance 50 Ω 402 Vout Output Voltage Swing 50 Ω load, for linear amplification -0.3 1.0 V 403 Vos Offset Voltage (adjustable)∗ DC offset cancellation -1.25 0.15 V 404 Pos Offset (adjustable)∗ equivalent optical power -92 750 µW 405 twu Warm-Up Time stable offset voltage 30 min Power Supply 501 Vs Supply Voltage ±15 V 502 Is Supply Current ±150 mA ∗ The output is clipped to -0.5 V, if the offset voltage is less than 0.5 V and no DC light is present. |
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