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IC212 Datasheet(PDF) 2 Page - IC-Haus GmbH

Part # IC212
Description  HIGHSPEED PHOTORECEIVER
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Manufacturer  ICHAUS [IC-Haus GmbH]
Direct Link  http://www.ichaus.biz
Logo ICHAUS - IC-Haus GmbH

IC212 Datasheet(HTML) 2 Page - IC-Haus GmbH

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iC212
HIGHSPEED PHOTORECEIVER
Rev A2, Page 2/15
DESCRIPTION
The iC-Haus Highspeed Photoreceiver iC212 has
been developed for optical high speed measurement.
With its bandwidth ranging from DC up to 1.4 GHz
it detects photo signals from constant light to high
speed with rise times down to 280 ps. The iC212
Highspeed Photoreceiver also features offset adjust-
ment to compensate DC levels of the input signal.
The photodiode used offers a spectral range from
320 to 1000 nm with an active area diameter of about
Ø 0.4 mm, which is increased by an Ø 1.5 mm ball
lens, resulting in an effective usable area of typical
0.75 mm². The Highspeed Photoreceiver is able to
detect optical power levels in the sub mW range at
GHz speed.
The iC212 Highspeed Photoreceiver comes with M6
mounting holes for integration in optical bench sys-
tems and an optional fiber-optic input adapter for op-
tical fiber coupling.
ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed.
Item
Symbol
Parameter
Conditions
Unit
No.
Min.
Max.
G001 Pmax
Optical Input Power
10
mW
G002 Vs
Power Supply Voltage
±20
V
ELECTRICAL CHARACTERISTICS
Test Conditions: Vs = ±15 V, Ta = 25 °C, System Impedace 50 Ω
Item
Symbol
Parameter
Conditions
Unit
No.
Min.
Typ.
Max.
Gain
101
A
Amplifier Transimpedance
Conversion Gain
50 Ω load
3.125
V/mA
λ
= 760 nm
1.625
V/mW
Frequency Response
201
fmax
Upper Cut-Off Frequency
-3 dB
1.4
Ghz
202
A
Gain Flatness
±1
dB
203
tr
Rise Time
10 to 90%
280
ps
204
tpd
Propagation Delay
optical in => electrical out, 50% to 50%
750
ps
Detector (Si PIN photodiode)
301
d
Active Area Diameter
ball lens Ø 1.5 mm
0.4
mm
302
Aeff
Effective Active Area
ball lens Ø 1.5 mm, note tolerances from Fig. 3
0.75
mm²
303
λ
Spectral Range
320
1000
nm
304
Pmax
Max. Optical Input Power
average
10
mW
linear amplification @ 760 nm
615
µW
305
NEP
Noise equivalent power
including amplifier noise, at λ=760nm and f =
1 GHz; (for frequency dependence see Fig. ??)
115
pW/
Hz
Output
401
Rout
Output Impedance
50
402
Vout
Output Voltage Swing
50 Ω load, for linear amplification
-0.3
1.0
V
403
Vos
Offset Voltage (adjustable)
DC offset cancellation
-1.25
0.15
V
404
Pos
Offset (adjustable)
equivalent optical power
-92
750
µW
405
twu
Warm-Up Time
stable offset voltage
30
min
Power Supply
501
Vs
Supply Voltage
±15
V
502
Is
Supply Current
±150
mA
The output is clipped to -0.5 V, if the offset voltage is less than 0.5 V and no DC light is present.


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