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2SA1931 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA1931
Description  High-Current Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1931 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA1931
2006-11-13
2
Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
−1
μA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0
−1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−50
V
hFE (1)
VCE = −1 V, IC = 1 A
100
300
DC current gain
hFE (2)
VCE = −1 V, IC = −3 A
60
Collector-emitter saturation voltage
VCE (sat)
IC = −2 A, IB = −0.2 A
−0.2
−0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = −2 A, IB = −0.2 A
−0.9
−1.5
V
Transition frequency
fT
VCB = −1 V, IC = −1 A
60
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
100
pF
Turn-on time
ton
0.1
Storage time
tstg
1.0
Switching time
Fall time
tf
−IB1 = IB2 = 0.15 A, duty cycle ≤ 1%
0.1
μs
Marking
20 μs
Input
IB2
IB1
Output
VCC = −30 V
IB2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
A1931
Part No. (or abbreviation code)


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