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2SA1931 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1931 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1931 2006-11-13 2 Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) VCE = −1 V, IC = 1 A 100 ― 300 DC current gain hFE (2) VCE = −1 V, IC = −3 A 60 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −0.2 A ― −0.2 −0.4 V Base-emitter saturation voltage VBE (sat) IC = −2 A, IB = −0.2 A ― −0.9 −1.5 V Transition frequency fT VCB = −1 V, IC = −1 A ― 60 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 100 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 1.0 ― Switching time Fall time tf −IB1 = IB2 = 0.15 A, duty cycle ≤ 1% ― 0.1 ― μs Marking 20 μs Input IB2 IB1 Output VCC = −30 V IB2 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. A1931 Part No. (or abbreviation code) |
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