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DMN6068LK3 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN6068LK3
Description  60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN6068LK3 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN6068LK3
Document Number DS32057 Rev 2 - 2
2 of 9
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN6068LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source voltage
VDSS
60
V
Gate-Source voltage
(Note 2)
VGS
±20
V
Single Pulsed Avalanche Energy
(Note 8)
EAS
37.5
mJ
Single Pulsed Avalanche Current
(Note 8)
IAS
5.0
A
Continuous Drain current
VGS = 10V
(Note 4)
ID
8.5
A
TA = 70°C (Note 4)
6.8
(Note 3)
6.0
Pulsed Drain current
VGS= 10V
(Note 5)
IDM
22.2
A
Continuous Source current (Body diode)
(Note 4)
IS
10.2
A
Pulsed Source current (Body diode)
(Note 5)
ISM
22.2
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 3)
PD
4.12
33
W
mW/
°C
(Note 4)
8.49
67.9
(Note 6)
2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 3)
RθJA
30.3
°C/W
(Note 4)
14.7
(Note 6)
59.0
Thermal Resistance, Junction to Lead
(Note 7)
RθJL
3.09
Operating and storage temperature range
TJ, TSTG
-55 to 150
°C
Notes:
2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 2, except the device is measured at t
≤ 10 sec.
5. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
8. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = 25°C


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