Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

DMS3019SSD Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMS3019SSD
Description  ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS3019SSD Datasheet(HTML) 2 Page - Diodes Incorporated

  DMS3019SSD Datasheet HTML 1Page - Diodes Incorporated DMS3019SSD Datasheet HTML 2Page - Diodes Incorporated DMS3019SSD Datasheet HTML 3Page - Diodes Incorporated DMS3019SSD Datasheet HTML 4Page - Diodes Incorporated DMS3019SSD Datasheet HTML 5Page - Diodes Incorporated DMS3019SSD Datasheet HTML 6Page - Diodes Incorporated DMS3019SSD Datasheet HTML 7Page - Diodes Incorporated DMS3019SSD Datasheet HTML 8Page - Diodes Incorporated DMS3019SSD Datasheet HTML 9Page - Diodes Incorporated Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
2 of 10
www.diodes.com
October 2010
© Diodes Incorporated
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
7.0
5.6
A
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
9.0
7.0
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
8.0
6.5
A
Pulsed Drain Current (Note 6)
IDM
40
A
Avalanche Current (Notes 6 & 7)
IAR
13
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
EAR
25.4
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
5.7
4.6
A
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
7.0
5.6
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
6.0
4.7
A
Pulsed Drain Current (Note 6)
ID
40
A
Avalanche Current (Notes 6 & 7)
IAR
16
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
EAR
12.8
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
1.19
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
RθJA
107
°C/W
Power Dissipation (Note 5)
PD
1.79
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
RθJA
70
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C


Similar Part No. - DMS3019SSD

ManufacturerPart #DatasheetDescription
logo
Diodes Incorporated
DMS3012SFG DIODES-DMS3012SFG Datasheet
270Kb / 8P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMS3012SFG-13 DIODES-DMS3012SFG-13 Datasheet
270Kb / 8P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI짰
DMS3012SFG-13 DIODES-DMS3012SFG-13 Datasheet
270Kb / 8P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMS3012SFG-7 DIODES-DMS3012SFG-7 Datasheet
270Kb / 8P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI짰
DMS3012SFG-7 DIODES-DMS3012SFG-7 Datasheet
270Kb / 8P
   30V N-CHANNEL ENHANCEMENT MODE MOSFET
More results

Similar Description - DMS3019SSD

ManufacturerPart #DatasheetDescription
logo
Cystech Electonics Corp...
MTNN8451KQ8 CYSTEKEC-MTNN8451KQ8 Datasheet
361Kb / 10P
   Asymmetric Dual N-Channel Enhancement Mode MOSFET
MTNN8452KQ8 CYSTEKEC-MTNN8452KQ8 Datasheet
358Kb / 10P
   Asymmetric Dual N-Channel Enhancement Mode MOSFET
logo
Diodes Incorporated
DMS3017SSD DIODES-DMS3017SSD Datasheet
207Kb / 10P
   ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DS35052 Rev. 2 - 2
logo
Cystech Electonics Corp...
MTNN081404SH8 CYSTEKEC-MTNN081404SH8 Datasheet
830Kb / 13P
   Asymmetric Dual N- Channel Enhancement Mode MOSFET
MTNN8453KQ8 CYSTEKEC-MTNN8453KQ8 Datasheet
361Kb / 10P
   Asymmetric Dual N-Channel Enhancement Mode MOSFET
logo
ACE Technology Co., LTD...
ACE13810B ACE-ACE13810B Datasheet
183Kb / 2P
   Dual Asymmetric N-Channel Enhancement Mode Power MOSFET
VER 1.3
logo
Advanced Power Electron...
AP3D2R6CMT A-POWER-AP3D2R6CMT Datasheet
140Kb / 8P
   ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
logo
Alpha & Omega Semicondu...
AO4926 AOSMD-AO4926 Datasheet
246Kb / 8P
   Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
AO4928 AOSMD-AO4928 Datasheet
160Kb / 8P
   Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
AO4912 AOSMD-AO4912 Datasheet
152Kb / 8P
   Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com