DST847BPDP6-7 datasheet(5/8 Pages) DIODES

Part #	DST847BPDP6-7

Description	COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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5 / 8 page

DST847BPDP6

Document number: DS32036 Rev. 1 - 2

5 of 8

www.diodes.com

January 2010

DST847BPDP6

Electrical Characteristics – Q2 PNP Transistor @TA = 25°C unless otherwise specified

Characteristic (Note 4)

Symbol

Min

Typical

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-50

-100

-

V

IC = -10μA, IB = 0

Collector-Emitter Breakdown Voltage

V(BR)CES

-50

-90

-

V

IC = -10μA, IB = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-45

-65

-

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

-8.5

-

V

IE = -1μA, IC = 0

Collector Cutoff Current

ICBO

-

-15

nA

VCB = -30V

DC Current Gain

hFE

100

200

340

330

-

470

-

IC = -10μA, VCE = -5V

IC = -2.0mA, VCE = -5V

Collector-Emitter Saturation Voltage

VCE(sat)

-

-70

-300

-175

-500

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

-

-760

-885

-1000

-1100

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage

VBE(on)

-600

-

-670

-715

-780

-850

mV

IC = -2.0mA, VCE = -5V

IC = -10mA, VCE = -5V

Current Gain-Bandwidth Product

fT

100

340

-

MHz

VCE = -5V, IC = -10mA,

f = 100MHz

Output Capacitance

Cobo

-

2.0

-

pF

VCB = -10V, f = 1.0MHz

Notes:

4. Short duration pulse test used to minimize self-heating effect.

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