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2SA1942 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1942 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SA1942 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −160 V, IE = 0 ― ― −5.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −160 ― ― V hFE (1) (Note) VCE = −5 V, IC = −1 A 55 ― 160 DC current gain hFE (2) VCE = −5 V, IC = −6 A 35 80 ― Collector-emitter saturation voltage VCE (sat) IC = −8 A, IB = −0.8 A ― −1.1 −2.5 V Base-emitter voltage VBE VCE = −5 V, IC = −6 A ― −1.0 −1.5 V Transition frequency fT VCE = −5 V, IC = −1 A ― 30 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 320 ― pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking 2SA1942 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SA1942_06 |
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Similar Description - 2SA1942_06 |
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