ZXMS6006DG

Document number: DS35142 Rev. 1 - 2

5 of 9

www.diodes.com

December 2010

© Diodes Incorporated

ZXMS6006DG

A Product Line of

Diodes Incorporated

IntelliFET

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Static Characteristics

Drain-Source Clamp Voltage

60

65

70

V

Off State Drain Current

-

-

1

µA

-

-

2

Input Threshold Voltage

0.7

1

1.5

V

Input Current

-

60

100

μA

-

120

200

Input Current While Over Temperature Active

-

-

-

400

μA

Static Drain-Source On-State Resistance

-

85

125

m

Ω

-

75

100

Continuous Drain Current (Note 4)

2.0

-

-

A

2.2

-

-

Continuous Drain Current (Note 5)

2.6

-

-

2.8

-

-

Current Limit (Note 7)

4

8

-

A

6

13

-

Dynamic Characteristics

Turn On Delay Time

-

8.6

-

μs

Rise Time

-

18

-

Turn Off Delay Time

-

34

-

Fall Time

-

15

-

Over-Temperature Protection

Thermal Overload Trip Temperature (Note 8)

150

175

-

°C

-

Thermal Hysteresis (Note 8)

-

10

-

°C

-

Notes:

7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully

on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside

saturation makes current limit unnecessary.

8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal

operating range, so this part is not designed to withstand over-temperature for extended periods..