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2SC4685 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC4685 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC4685 2004-07-26 3 VBE (sat) – IC Collector current IC (A) Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC IC – VCE hFE – IC Collector current IC (A) Collector-emitter voltage VCE (V) Safe Operating Area 0 0 4 8 1 2 4 5 IB = 0.5 mA 6 2 6 10 Common emitter Ta = 25°C 40 5 50 3 30 20 10 2 0 0 4 0.2 0.8 1.0 Common emitter VCE = 2 V 2 6 8 Ta = 125°C 25 −40 0.4 1.2 0.6 5 0.01 0.03 0.1 0.3 1 3 10 3 1 0.01 0.3 0.1 Common emitter IC/IB = 200 Tc = 125°C 25 −40 0.03 Common emitter IC/IB = 200 0.01 0.01 0.3 0.1 10 1 0.1 3 10 Tc = −40°C 25 125 3 1 0.03 0.03 0.3 100 ms* IC max (pulsed)** 0.1 1 0.5 3 10 50 5 30 1 10 0.3 5 3 DC operation Tc = 25°C IC max (continuous) 10 ms* *: Single nonrepetitive pulse Tc = 25°C **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 10000 100 0.01 Common emitter VCE = 2 V 1000 3000 0.3 Tc = 125°C 25 −40 0.03 1 10 30 3 0.1 300 10 |
Similar Part No. - 2SC4685_04 |
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Similar Description - 2SC4685_04 |
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