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DMP4050SSS Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMP4050SSS Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page DMP4050SSS Document Number DS32108 Rev 1 - 2 4 of 8 www.diodes.com March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4050SSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -40V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ -3.0 V ID= -250μA, VDS= VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ 0.038 0.050 Ω VGS= -10V, ID= -6A 0.055 0.079 VGS= -4.5V, ID= -5A Forward Transconductance (Notes 7 & 8) gfs ⎯ 14 ⎯ S VDS= -15V, ID= -6A Diode Forward Voltage (Note 7) VSD ⎯ -0.86 -1.2 V IS= -6A, VGS= 0V Reverse recovery time (Note 8) trr 18.5 ⎯ ns IS= -2.5, di/dt= 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 15.6 ⎯ nC DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 674 ⎯ pF VDS= -20V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 115 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 67.7 ⎯ pF Total Gate Charge (Note 9) Qg ⎯ 6.9 ⎯ nC VGS= -4.5V VDS= -20V ID= -6A Total Gate Charge (Note 9) Qg ⎯ 13.9 ⎯ nC VGS= -10V Gate-Source Charge (Note 9) Qgs ⎯ 2 ⎯ nC Gate-Drain Charge (Note 9) Qgd ⎯ 3.4 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 1.9 ⎯ ns VDD= -20V, VGS= -10V ID= -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 9) tr ⎯ 3.1 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 31.5 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 12.6 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. |
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