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BS870-7-F Datasheet(PDF) 1 Page - Diodes Incorporated |
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BS870-7-F Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page BS870 Document number: DS11302 Rev. 14 - 2 1 of 3 www.diodes.com May 2008 © Diodes Incorporated BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 TOP VIEW Equivalent Circuit Source Gate Drain D G S TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous ID 250 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient RθJA 417 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage BVDSS 60 80 ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA VDS = 25V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 3.5 5.0 Ω VGS = 10V, ID = 0.2A On-State Drain Current ID(ON) ⎯ 1.0 0.5 A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 22 50 pF Output Capacitance Coss ⎯ 11 25 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ⎯ 2.0 20 ns Turn-Off Delay Time tD(OFF) ⎯ 5.0 20 ns VES = 10V, RL = 150Ω, VDS = 10V, RD = 100Ω Notes: 1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
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