2N7002_10 datasheet(2/5 Pages) DIODES

Part #	2N7002

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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2N7002

Document number: DS11303 Rev. 24 - 2

2 of 5

www.diodes.com

November 2010

2N7002

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS ≤ 1.0MΩ

VDGR

60

V

Gate-Source Voltage

Continuous

Pulsed

VGSS

±20

±40

V

Drain Current (Note 4)

Continuous

Continuous @ 100°C

Pulsed

ID

115

73

800

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 4)

Derating above TA = 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BVDSS

60

70

⎯

V

VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current

@ TC = 25°C

@ TC = 125°C

IDSS

⎯

1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

⎯

±10

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(th)

1.0

⎯

2.5

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

@ TJ = 25°C

@ TJ = 125°C

RDS (ON)

⎯

3.2

4.4

7.5

13.5

Ω

VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0

⎯

A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80

⎯

mS

VDS =10V, ID = 0.2A

Diode Forward Voltage (Note 6)

VSD

⎯

0.78

1.5

V

VGS = 0V, IS = 115mA

Continuous Source Current (Note 6)

IS

⎯

200

mA

⎯

Pulse Source Current (Note 6)

ISD

⎯

2

A

⎯

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

⎯

22

50

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

⎯

11

25

pF

Reverse Transfer Capacitance

Crss

⎯

2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

⎯

7.0

20

ns

VDD = 30V, ID = 0.2A,

RL = 150Ω, VGEN = 10V,

RGEN = 25Ω

Turn-Off Delay Time

tD(OFF)

⎯

11

20

ns

Notes:

4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

5. Short duration pulse test used to minimize self-heating effect.

6. VSD measured in 250μs pulse, duty cycle = 2%; ISD measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data

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