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B1100 Datasheet(PDF) 2 Page - Diodes Incorporated |
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B1100 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page B170/B - B1100/B Document number: DS30018 Rev. 10 - 2 2 of 4 www.diodes.com September 2010 © Diodes Incorporated B170/B - B1100/B Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol B170/B B180/B B190/B B1100/B Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectified Output Current @ TT = 125°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Repetitive Peak Reverse Current IRRM 1.0 A Thermal Characteristics Characteristic Symbol B170/B B180/B B190/B B1100/B Unit Typical Thermal Resistance Junction to Terminal (Note 4) RθJT 25 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop VF - - 0.79 0.69 V IF = 1.0A, TA = 25°C IF = 1.0A, TA = 100°C Leakage Current (Note 5) IR - - - - 0.5 5.0 mA @ Rated VR, TA = 25°C @ Rated VR, TA = 100°C Total Capacitance CT - - 80 pF VR = 4V, f = 1MHz Notes: 4. Valid provided that terminals are kept at ambient temperature. 5. Short duration pulse test used to minimize self-heating effect. 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics F T = 25°C I Pulse Width = 300µs J F 10 100 1,000 0.1 1 10 100 V , DC REVERSE VOLTAGE (V) Fig. 2 Total Capacitance vs. Reverse Voltage R |
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