B170/B - B1100/B

Document number: DS30018 Rev. 10 - 2

2 of 4

www.diodes.com

September 2010

© Diodes Incorporated

B170/B - B1100/B

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

B170/B

B180/B

B190/B

B1100/B

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

70

80

90

100

V

RMS Reverse Voltage

49

56

63

70

V

Average Rectified Output Current

1.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

30

A

Repetitive Peak Reverse Current

1.0

A

Thermal Characteristics

Characteristic

Symbol

B170/B

B180/B

B190/B

B1100/B

Unit

Typical Thermal Resistance Junction to Terminal (Note 4)

25

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage Drop

-

-

0.79

0.69

V

Leakage Current (Note 5)

-

-

-

-

0.5

5.0

mA

Total Capacitance

-

-

80

pF

Notes:

4. Valid provided that terminals are kept at ambient temperature.

5. Short duration pulse test used to minimize self-heating effect.

0.01

0.1

1.0

10

0

0.2

0.4

0.6

0.8

1.0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Typical Forward Characteristics

F

T = 25°C

I Pulse Width = 300µs

J

F

10

100

1,000

0.1

1

10

100

V , DC REVERSE VOLTAGE (V)

Fig. 2 Total Capacitance vs. Reverse Voltage

R