MMBTA06-7-F datasheet(1/4 Pages) DIODES

Part #	MMBTA06-7-F

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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MMBTA05 / MMBTA06

Document number: DS30037 Rev. 12 - 2

1 of 4

www.diodes.com

April 2009

MMBTA05 / MMBTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (MMBTA55 / MMBTA56)

•

Ideal for Low Power Amplification and Switching

•

Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

MMBTA05

MMBTA06

Unit

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current - Continuous (Note 1)

IC

500

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CBO

60

80

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

MMBTA05

MMBTA06

V(BR)CEO

60

80

⎯

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

⎯

V

IE = 100μA, IC = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICBO

⎯

100

nA

VCB = 60V, IE = 0

VCB = 80V, IE = 0

Collector Cutoff Current

MMBTA05

MMBTA06

ICES

⎯

100

nA

VCE = 60V, IBO = 0V

VCE = 80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

⎯

IC = 10mA, VCE = 1.0V

IC = 100mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.25

V

IC = 100mA, IB = 10mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

1.2

V

IC = 100mA, VCE = 1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

100

⎯

MHz

VCE = 2.0V, IC = 10mA, f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Top View

Device Schematic

E

B

C

3

12

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