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MMST4124 Datasheet(PDF) 1 Page - Diodes Incorporated |
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MMST4124 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  MMST4124 Document number: DS30163 Rev. 9 - 2 1 of 3 www.diodes.com January 2009 © Diodes Incorporated MMST4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMST4126) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Notes 3 and 4) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous (Note 1) IC 200 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 200 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 οC/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO 30 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICBO ⎯ 50 nA VCB = 20V, IE = 0V Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 3.0V, IC = 0V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 120 60 360 ⎯ ⎯ IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.30 V IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 0.95 V IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ⎯ VCE = 1.0V, IC = 2.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration pulse test used to minimize self-heating effect. Top View Device Schematic E B C Please click here to visit our online spice models database. |
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