MITSUBISHI IGBT MODULES

CM500HA-34A

HIGH POWER SWITCHING USE

INSULATED TYPE

3

July-2010

Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

just under the chips. (Refer to the figure of chip location)

Note.5: Base plate flatness measurement point is as in the following figure.

Y

X

+: Convex

-: Concave

Bottom

Bottom

Bottom

Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.

(Refer to the figure of test circuit)

Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

CHIP LOCATION (Top view)

Dimension in mm, tolerance: ±1 mm

Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.