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DCX122LU Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DCX122LU
Description  COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DCX122LU Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30425 Rev. 5 - 2
2 of 4
www.diodes.com
DCX (LO-R1) U
© Diodes Incorporated
Maximum Ratings PNP Section
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Supply Voltage
VCC
-50
V
Input Voltage
DCX122LU
DCX142JU
VIN
+5 to -6
+5 to -6
V
Input Voltage
DCX122TU
DCX142TU
VEBO (MAX)
-5
V
Output Current
All
IC
-100
mA
Power Dissipation
(Note 1,2)
Pd
200
mW
Thermal Resistance, Junction to Ambient Air
(Note 1,2)
RθJA
625
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics NPN Section
@TA = 25°C unless otherwise specified
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DCX122LU
DCX142JU
Vl(off)
0.3
0.3
⎯
⎯
V
VCC = 5V, IO = 100μA
Input Voltage
DCX122LU
DCX142JU
Vl(on)
⎯
⎯
2.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
⎯
⎯
0.3V
V
IO/Il = 5mA/0.25mA
Input Current
DCX122LU
DCX142JU
Il
⎯
⎯
28
13
mA VI = 5V
Output Current
IO(off)
⎯
⎯
0.5
μA VCC = 50V, VI = 0V
DC Current Gain
DCX122LU
DCX142JU
Gl
56
56
⎯
⎯
⎯
VO = 5V, IO = 10mA
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section
@TA = 25°C unless otherwise specified
R1 Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
40
⎯
⎯
V
IC = 1mA
Emitter-Base Breakdown Voltage
DCX122TU
DCX142TU
BVEBO
5
⎯
⎯
V
IE = 50μA
IE = 50μA
Collector Cutoff Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V
Emitter Cutoff Current
DCX122TU
DCX142TU
IEBO
⎯
⎯
⎯
0.5
0.5
μA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
IC = 5mA, IB = 0.25mA
DC Current Transfer Ratio
DCX122TU
DCX142TU
hFE
100
100
250
250
600
600
⎯
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only


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