BC857BV-7 datasheet(1/4 Pages) DIODES

Part #	BC857BV-7

Description	PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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BC857BV

Document number: DS30433 Rev. 5 - 2

1 of 4

www.diodes.com

April 2009

BC857BV

PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Die Construction

•

Complementary PNP Type Available (BC847BV)

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 3)

•

"Green" Device (Notes 5 and 6)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-563

•

Case Material: Molded Plastic, “Green” Molding Compound,

Note 6. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 2

•

Ordering Information: See Page 2

•

Weight: 0.003 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-100

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 2)

PD

150

mW

Thermal Resistance, Junction to Ambient (Note 2)

RθJA

833

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 4)

V(BR)CBO

-50

—

V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage (Note 4)

V(BR)CEO

-45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 4)

V(BR)EBO

-5

—

V

IE = 1μA, IC = 0

DC Current Gain (Note 4)

hFE

220

290

475

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage (Note 4)

VCE(SAT)

—

-100

-400

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 4)

VBE(SAT)

—

-700

-900

—

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage (Note 4)

VBE(ON)

-600

—

-750

-820

mV

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current (Note 4)

ICBO

—

-15

-4.0

nA

µA

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = -5.0V, IC = -10mA, f = 100MHz

Output Capacitance

COB

—

4.5

pF

VCB = -10V, f = 1.0MHz

Noise Figure

NF

—

10

dB

IC = -0.2mA, VCE = -5.0Vdc,

RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz

Notes:

1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Top View

Bottom View

Device Schematic (Note 1)

C

1

B2

E2

C2

E1

B

1

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