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BC857BV-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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BC857BV-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page BC857BV Document number: DS30433 Rev. 5 - 2 1 of 4 www.diodes.com April 2009 © Diodes Incorporated BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Complementary PNP Type Available (BC847BV) • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Notes 5 and 6) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic, “Green” Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.003 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 2) PD 150 mW Thermal Resistance, Junction to Ambient (Note 2) RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 4) V(BR)CBO -50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 4) V(BR)EBO -5 — — V IE = 1μA, IC = 0 DC Current Gain (Note 4) hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) — — — -100 -400 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 4) VBE(SAT) — — -700 -900 — — mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 4) VBE(ON) -600 — — — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA Collector-Cutoff Current (Note 4) ICBO — — — — -15 -4.0 nA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Output Capacitance COB — — 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF — — 10 dB IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Short duration pulse test used to minimize self-heating effect. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Top View Bottom View Device Schematic (Note 1) C 1 B2 E2 C2 E1 B 1 Please click here to visit our online spice models database. |
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