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DFLS1200-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DFLS1200-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 3 page DFLS1200 Document number: DS30628 Rev. 6 - 2 1 of 3 www.diodes.com October 2008 © Diodes Incorporated DFLS1200 PowerDI is a registered trademark of Diodes Incorporated. 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI ®123 Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • Patented Interlocking Clip Design for High Surge Current Capacity • Lead Free Finish, RoHS Compliant (Note 4) • "Green" Molding Compound (No Br, Sb) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: PowerDI ®123 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: Cathode Band • Terminals: Finish – Matte Tin annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.01 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V RMS Reverse Voltage VR(RMS) 141 V Average Forward Current IF(AV) 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 40 A Thermal Characteristics Characteristic Symbol Typ Max Unit Thermal Resistance Junction to Ambient (Note 1) RθJA 132 ⎯ °C/W Thermal Resistance Junction to Soldering Point (Note 2) RθJS ⎯ 7 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +175 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 3) V(BR)R 200 ⎯ ⎯ V IR = 8μA Forward Voltage VF ⎯ ⎯ 0.85 V IF = 1.0A Leakage Current (Note 3) IR ⎯ ⎯ 2 μA VR = 200V, TA = 25°C Total Capacitance CT ⎯ 23 ⎯ pF VR = 5VDC, f = 1MHz Notes: 1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. TA = 25°C 2. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction. 3. Short duration pulse test used to minimize self-heating effect. 4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes. Top View Please click here to visit our online spice models database. |
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