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DFLS1200-7 Datasheet(PDF) 1 Page - Diodes Incorporated

Part # DFLS1200-7
Description  1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DFLS1200-7 Datasheet(HTML) 1 Page - Diodes Incorporated

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DFLS1200
Document number: DS30628 Rev. 6 - 2
1 of 3
www.diodes.com
October 2008
© Diodes Incorporated
DFLS1200
PowerDI is a registered trademark of Diodes Incorporated.
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PowerDI
®123
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Patented Interlocking Clip Design for High Surge Current
Capacity
Lead Free Finish, RoHS Compliant (Note 4)
"Green" Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: PowerDI
®123
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: Cathode Band
Terminals: Finish – Matte Tin annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.01 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
V
RMS Reverse Voltage
VR(RMS)
141
V
Average Forward Current
IF(AV)
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
40
A
Thermal Characteristics
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance Junction to Ambient (Note 1)
RθJA
132
°C/W
Thermal Resistance Junction to Soldering Point (Note 2)
RθJS
7
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 3)
V(BR)R
200
V
IR = 8μA
Forward Voltage
VF
0.85
V
IF = 1.0A
Leakage Current (Note 3)
IR
2
μA
VR = 200V, TA = 25°C
Total Capacitance
CT
23
pF
VR = 5VDC, f = 1MHz
Notes:
1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf. TA = 25°C
2. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
3. Short duration pulse test used to minimize self-heating effect.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
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