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LMN200B02 Datasheet(PDF) 4 Page - Diodes Incorporated |
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LMN200B02 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 10 page DS30658 Rev. 7 - 2 4 of 9 www.diodes.com LMN200B02 © Diodes Incorporated Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS V(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current (Drain Leakage Current) IDSS ⎯ ⎯ 1 μA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -0.95 mA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.9 2.2 V VDS = VGS, ID = 0.25mA Static Drain-Source On-State Voltage VDS(on) ⎯ 0.10 1.5 V VGS = 5V, ID = 50mA ⎯ 0.15 3.75 VGS = 10V, ID = 115mA On-State Drain Current ID(on) 500 ⎯ ⎯ mA VGS = 10V, VDS ≥2XVDS(ON) Static Drain-Source On-Resistance RDS(on) ⎯ 1.6 3 Ω VGS = 5V, ID = 50mA ⎯ 1.4 2 VGS = 10V, ID = 500mA Forward Transconductance gFS 80 240 ⎯ mS VDS ≥2XVDS(ON), ID = 115 mA 80 350 ⎯ VDS ≥2XVDS(ON), ID = 200 mA Gate Pull-Down Resistor, +/- 30% R3 ⎯ 37 ⎯ K Ω ⎯ DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF VDS = -25V, VGS = 0V, f = 1MHz Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(on) ⎯ ⎯ 20 ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm Turn-Off Delay Time tD(off) ⎯ ⎯ 40 ns SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage VSD ⎯ 0.90 1.5 V VGS = 0V, IS = 115 mA Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) IS ⎯ ⎯ 115 mA ⎯ Maximum Pulsed Drain-Source Diode Forward Current ISM ⎯ ⎯ 800 mA ⎯ Notes: 4. Short duration pulse test used to minimize self-heating effect. Typical Characteristics 0 50 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (°C) Fig. 3 Max Power Dissipation vs. Ambient Temperature (Total Device) A 100 150 200 0 (Note 3) 250 300 350 |
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Similar Description - LMN200B02_1 |
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