DMP2012SN datasheet(2/4 Pages) DIODES

Part #	DMP2012SN

Description	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DMP2012SN

Fig. 1 Typical Output Characteristics

0

0.5

1

1.5

2

2.5

3

0

0.5

1

1.5

2

2.5

3

-V , DRAIN-SOURCE VOLTAGE (V)

DS

T = 25°C

A

-3.5V

-3V

-2.5V

V

= -1.5V

GS

-2V

-5V

-4V

-4.5V

Fig. 2 Typical Transfer Characteristics

0

0.5

1

1.5

2

2.5

3

0

0.5

1

1.5

2

2.5

3

-V , Gate-Source Voltage(V)

GS

V

= 10V

DS

T = 25°C

J

T= 125°C

J

T= -55°C

J

Fig. 3 On-Resistance vs. Gate Voltage

0

0.2

0.4

0.6

0.8

02

4

68

-V , GATE-SOURCE VOLTAGE (V)

GS

10

I = 0.5A

D

I = 1.0A

D

Fig. 4 On-Resistance vs. Drain Current

0.1

1

0

0.5

1

1.5

2

2.5

3

-I , DRAIN CURRENT (A)

D

T = 25°C

J

V

= -10V

GS

V

= -4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

0

0.2

0.4

0.6

0.8

-50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

V

= -2.5V

GS

V

= -4.5V

GS

I = -0.7A

D

I = -0.7A

D

-0.4A

Fig. 6 Gate Threshold Voltage vs. Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

V

= 10V

I = 1mA

DS

D

DMP2012SN

Document number: DS30790 Rev. 3 - 2

2 of 4

www.diodes.com

November 2007

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