DCX69-13 datasheet(1/4 Pages) DIODES

Part #	DCX69-13

Description	PNP SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DCX69/-16/-25

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Type Available (DCX68)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT89-3L

•

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.072 grams (approximate)

SOT89-3L

3

1

2,4

COLLECTOR

EMITTER

BASE

4

3

2

1

C

B

E

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-25

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-1.0

A

Peak Pulse Power

ICM

-2.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3) @ TA = 25°C

PD

1

W

Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)

RθJA

125

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-25

⎯

V

IC = -10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-20

⎯

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

⎯

V

IE = -10μA, IC = 0

Collector-Base Cutoff Current

ICBO

⎯

-100

-10

nA

μA

VCB = -25V, IE = 0

VCB = -25V, IE = 0, TA = 150°C

Emitter-Base Cutoff Current

IEBO

⎯

-100

nA

VEB = -5.0V, IC = 0

ON CHARACTERISTICS (Note 4)

DCX69, DCX69-16, DCX69-25

50

60

⎯

VCE = -10V, IC = -5.0mA

VCE = -1.0V, IC = -1.0A

DCX69

85

⎯

375

⎯

VCE = -1.0V, IC = -500mA

DCX69-16

100

⎯

250

⎯

VCE = -1.0V, IC = -500mA

DC Current Gain

DCX69-25

hFE

160

⎯

375

⎯

VCE = -1.0V, IC = -500mA

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.5

V

IC = -1.0A, IB = -100mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-0.7

-1.0

V

VCE = -10V, IC = -5mA

VCE = -1.0V, IC = -500mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

40

200

⎯

MHz

VCE = -5.0V, IC = -50mA,

f = 100MHz

Output Capacitance

Cobo

⎯

17

⎯

pF

VCB = -10V, f = 1MHz

Notes:

1.

No purposefully added lead.

2.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3.

Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS31264 Rev. 5 - 2

1 of 4

www.diodes.com

DCX69/-16/-25

4.

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

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