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DCX69-13 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DCX69-13 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DCX68) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.072 grams (approximate) SOT89-3L 3 1 2,4 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -1.0 A Peak Pulse Power ICM -2.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 1 W Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3) RθJA 125 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -25 ⎯ ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -20 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ ⎯ V IE = -10μA, IC = 0 Collector-Base Cutoff Current ICBO ⎯ ⎯ -100 -10 nA μA VCB = -25V, IE = 0 VCB = -25V, IE = 0, TA = 150°C Emitter-Base Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5.0V, IC = 0 ON CHARACTERISTICS (Note 4) DCX69, DCX69-16, DCX69-25 50 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VCE = -10V, IC = -5.0mA VCE = -1.0V, IC = -1.0A DCX69 85 ⎯ 375 ⎯ VCE = -1.0V, IC = -500mA DCX69-16 100 ⎯ 250 ⎯ VCE = -1.0V, IC = -500mA DC Current Gain DCX69-25 hFE 160 ⎯ 375 ⎯ VCE = -1.0V, IC = -500mA Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -0.5 V IC = -1.0A, IB = -100mA Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ ⎯ -0.7 -1.0 V VCE = -10V, IC = -5mA VCE = -1.0V, IC = -500mA SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 40 200 ⎯ MHz VCE = -5.0V, IC = -50mA, f = 100MHz Output Capacitance Cobo ⎯ 17 ⎯ pF VCB = -10V, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS31264 Rev. 5 - 2 1 of 4 www.diodes.com DCX69/-16/-25 © Diodes Incorporated 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. Please click here to visit our online spice models database. |
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