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2DB1119S Datasheet(PDF) 1 Page - Diodes Incorporated

Part # 2DB1119S
Description  PNP SURFACE MOUNT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2DB1119S Datasheet(HTML) 1 Page - Diodes Incorporated

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2DB1119S
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3) @ TA = 25°C
PD
1
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-25
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE = -10μA, IC = 0
Collector Cut-Off Current
ICBO
-0.1
μA
VCB = -20V, IE = 0
Emitter Cut-Off Current
IEBO
-0.1
μA
VEB = -4V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.15
-0.7
V
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.85
-1.2
V
IC = -500mA, IB = -50mA
140
280
VCE = -2V, IC = -50mA
DC Current Gain
hFE
40
VCE = -2V, IC = -1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
200
MHz
VCE = -10V, IC = -50mA
f = 100MHz
Output Capacitance
Cob
12
pF
VCB = -10V, IE = 0,
f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
DS31298 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
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