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DMP3056LSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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2 / 4 page DMP3056LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 ±800 nA VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1 1.7 -2.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ 45 65 m Ω VGS = -10V, ID = -6.0A VGS = -4.5V, ID = -5.0A Forward Transconductance gfs ⎯ 8 ⎯ S VDS = -10V, ID = -5.3A Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = -1.7A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 722 ⎯ pF Output Capacitance Coss ⎯ 114 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 92 ⎯ pF VDS = -25V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 3.3 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS QG ⎯ 6.8 ⎯ nC VDS = -15V, VGS = -4.5V, ID = -6A Total Gate Charge QG ⎯ 13.7 ⎯ Gate-Source Charge QGS ⎯ 1.6 ⎯ Gate-Drain Charge QGD ⎯ 4.18 ⎯ nC VDS = -15V, VGS = -10V, ID = -6A Turn-On Delay Time td(on) ⎯ 6.4 ⎯ Rise Time tr ⎯ 5.3 ⎯ Turn-Off Delay Time td(off) ⎯ 26.5 ⎯ Fall Time tf ⎯ 14.7 ⎯ ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω Notes: 5. Short duration pulse test used to minimize self-heating effect. Fig. 1 Typical Output Characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -V , DRAIN-SOURCE VOLTAGE (V) DS V = -10V GS V = -4.5V GS V = -3.0V GS V = -2.5V GS V = -1.5V V = -1.0V GS GS Fig. 2 Typical Transfer Characteristics 0 1 2 3 4 5 6 7 8 9 10 -V , GATE SOURCE VOLTAGE (V) GS 1 1.5 2 2.5 3 3.5 4 T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 5V Pulsed DS DMP3056LSS Document number: DS31419 Rev. 6 - 2 2 of 4 www.diodes.com September 2008 © Diodes Incorporated |
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