DMN3052LSS-13 datasheet(2/5 Pages) DIODES

Part #	DMN3052LSS-13

Description	SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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2 / 5 page

DMN3052LSS

Document number: DS31583 Rev. 3 - 2

2 of 5

www.diodes.com

September 2009

DMN3052LSS

0

4

8

12

16

20

24

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 10V

GS

V

= 4.5V

GS

V

= 3.0V

GS

V

= 2.5V

GS

V

= 2.0V

GS

V

= 1.5V

GS

0

4

8

12

16

20

24

0.5

1

1.5

2

2.5

3

3.5

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

Pulsed

DS

0

0.01

0.02

0.03

0.04

0.05

0.06

0

4

8

121620

24

I , DRAIN-SOURCE CURRENT (A)

D

Fig 3 On-Resistance vs. Drain Current & Gate Voltage

V

= 10V

GS

V

= 4.5V

GS

V

= 2.5V

GS

0

0.01

0.02

0.03

0.04

0.05

0.06

04

8

12

16

20

24

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 4 On-Resistance vs. Drain Current & Temperature

V

= 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 Static Drain-Source On-Resistance

vs. Ambient Temperature

V

= 10V

I = 10A

GS

D

V

= 4.5V

I = 5A

GS

D

0.4

0.6

0.8

1.0

1.2

-50-25

0

25

50

75100

125

150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

I = 250µA

D

I = 1mA

D

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