MJD340-13 datasheet(2/4 Pages) DIODES

Part #	MJD340-13

Description	HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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MJD340

Document number: DS31609 Rev. 2 - 2

2 of 4

www.diodes.com

December 2008

MJD340

0

T , AMBIENT TEMPERATURE ( C)

A

°

R

= 81°C/W

θJA

Fig. 1 Power Dissipation

vs. Ambient Temperature (Note 3)

0.5

1.0

25

50

75

100

125

150

1.5

2.0

0.001

0.01

0.1

1

10

0.1

1

10

100

1,000

V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

DC

Pw = -100ms

Pw = -10ms

10

100

1,000

0.1

1

10

100

1,000

10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V

= 2V

CE

0.1

1

10

100

1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.01

0.1

1

I/I = 10

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

0.1

1

10

100

1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.2

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V

= 2V

CE

0.1

1

10

100

1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.2

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I

= 10

CB

/I

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