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2DD2679-13 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # 2DD2679-13
Description  LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2DD2679-13 Datasheet(HTML) 3 Page - Diodes Incorporated

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2DD2679
Document number: DS31629 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2679
1
10
100
1,000
10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I
= 20
CB
/I
0.1
1
10
100
V , REVERSE VOLTAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
10
100
1,000
1
Cibo
C
obo
f = 1MHz
01020
30
40
50
60
70
80
90 100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
V
= 2V
f = 100MHz
CE
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
T - T = P * R
(t)
Duty Cycle, D = t /t
JA
JA
12
θ
R
(t) = r(t) *
θJA
R
R
= 133°C/W
θ
θ
JA
JA
P(pk)
t
1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5


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