DMG8601UFG

Document number: DS31788 Rev. 4 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated

DMG8601UFG

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

Gate-Source Breakdown Voltage

±12

-

-

V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

0.35

-

0.95

V

Static Drain-Source On-Resistance

-

-

-

17

20

25

23

27

34

mΩ

Forward Transfer Admittance

-

10

-

S

Diode Forward Voltage

-

0.7

1.0

V

DYNAMIC CHARACTERISTICS

Input Capacitance

-

143

-

pF

f = 1.0MHz

Output Capacitance

-

74

-

pF

Reverse Transfer Capacitance

-

29

-

pF

Gate Resistance

-

202

-

Ω

Total Gate Charge

-

8.8

-

nC

Gate-Source Charge

-

1.4

-

nC

Gate-Drain Charge

-

3.0

-

nC

Turn-On Delay Time

-

53

-

ns

Turn-On Rise Time

-

78

-

ns

Turn-Off Delay Time

-

562

-

ns

Turn-Off Fall Time

-

234

-

ns

Notes:

4. Short duration pulse test used to minimize self-heating effect.

0

4

8

12

16

20

24

28

32

36

40

0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

V

= 2.5V

GS

0

5

10

15

20

25

30

0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS