PAGE . 1

May 21.2010-REV.01

2N7002KDW

FEATURES

• R

• R

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: SOT-363 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : K27

60V N-Channel Enhancement Mode MOSFET - ESD Protected

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

0.054(1.35)

0.045(1.15)

0.040(1.00)

0.031(0.80)

0.018(0.45)

0.006(0.15)

0.087(2.20)

0.078(2.00)

0.10 MAX.

SOT-363

Unit: inch (mm)

1

2

3

6

5

4

1

2

3

6

5

4

1

2

3

6

5

4

PA RA M E TE R

S ym bol

Li m i t

Uni t s

D r ai n- S o ur ce Vo ltage

V

DS

60

V

Ga t e - S our c e Vo lt age

V

GS

+ 20

V

C o nt i nuo us D r a i n C ur r e nt

I

D

11 5

m A

I

DM

800

m A

Ma xi mum P o we r D i s s i p a t i o n

T

T

P

D

200

120

mW

Oper ati ng J unc t i on and S t or age

Te m per atur e Ra ng e

T

- 5 5 t o + 150

Junction-to Ambient Thermal

R

θJA

625