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DMG4932LSD Datasheet(PDF) 6 Page - Diodes Incorporated

Part # DMG4932LSD
Description  ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG4932LSD Datasheet(HTML) 6 Page - Diodes Incorporated

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DMG4932LSD
Document number: DS32119 Rev. 4 - 2
6 of 9
www.diodes.com
August 2010
© Diodes Incorporated
DMG4932LSD
010
20
15
25
30
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
5
0
0.010
0.020
0.015
0.005
V
= 10V
GS
V
= 4.5V
GS
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.04
0.03
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
V
= 4.5V
GS
T = 125°C
A
Fig. 16 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
V
= 4.5V
I = 5A
GS
D
V
= 10V
I = 10A
GS
D
Fig. 17 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
V
= 4.5V
I = 5A
GS
D
V
= 10V
I = 10A
GS
D
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.5
1.0
1.5
2.0
2.5
3.0
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 19 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
5
10
15
20
25
30
T = 25°C
A


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