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DMG4466SSS Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMG4466SSS Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page  DMG4466SSS Document number: DS32137 Rev. 3 - 2 4 of 6 www.diodes.com September 2010 © Diodes Incorporated DMG4466SSS 0 5 10 15 20 25 30 Fig. 9 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V) DS 10 1,000 100 C iss C rss C oss f = 1MHz 0 5 10 15 20 25 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS 1 10 100 1,000 10,000 T = 25°C A T = 85°C A T = 125°C A T = 150°C A 02 4 6 8 10 12 Fig. 11 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g 0 2 4 6 8 10 V = 15V I = 10A DS D 0.001 0.01 0.1 1 10 100 Fig. 12 Transient Thermal Response t , PULSE DURATION TIME (s) 1 0.00001 1,000 0.0001 0.001 0.01 0.1 1 T - T = P * R (t) Duty Cycle, D = t /t JA JA 12 θ R (t) = r(t) * θJA R R = 90°C/W θ θ JA JA P(pk) t1 t 2 D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 |
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